Method for producing semiconductor memory devices and integrated memory device

ABSTRACT

The invention provides an integration scheme for a memory cell array, especially a charge-trapping memory cell array, comprising an architecture of local interconnects, which enables to avoid nitride insulations of wordline stacks and to produce CMOS devices of different structures and dimensions in standard technology along with the tinier memory cell transistors.

This application is a divisional of U.S. patent application Ser. No.10/795,611, filed on Mar. 8, 2004, now U.S. Pat. No. 7,041,545, entitled“Method for Producing Semiconductor Memory Devices and Integrated MemoryDevice,” which is incorporated herein by reference.

TECHNICAL FIELD

The invention generally relates to semiconductor devices and moreparticularly to the integration of a memory cell array with logicaddressing circuitry.

BACKGROUND

Memory cells and their structural features are submitted to a steadyprocess of diminution in order to reduce the area of the cell array andto achieve an ever-growing storage density. This development is to somedegree adverse to the requirements of the complementary transistorsforming the addressing logic circuits arranged in the periphery of thememory cell array and usually produced in standard CMOS technology,which renders devices of larger dimensions. It is a heretoforeunresolved problem, how memory cells comprising transistor structures ona scale of typically 70 nm, especially charge-trapping memory cells, canbe integrated with CMOS devices of much larger dimensions on the samesemiconductor substrate by a process which does not deviatesignificantly from standard manufacturing processes.

Memory devices with charge-trapping layers, especially SONOS memorycells comprising oxide-nitride-oxide layer sequences as storage medium,are usually programmed by channel hot electron injection. U.S. Pat. Nos.5,768,192 and 6,011,725 disclose charge-trapping memory cells of aspecial type of so-called NROM cells, which can be used to store bits ofinformation both at the source and at the drain below the respectivegate edges. The programmed cell is read in reverse mode to achieve asufficient two-bit separation. Erasure is performed by hot holeinjection.

U.S. Patent Publication 2003/0185055 A1 and a corresponding paper of C.C. Yeh et al. entitled “PHINES: A Novel Low Power Program/Erase, SmallPitch, 2-Bit per Cell Flash Memory,” 2002 IEEE, disclose a non-volatilesemiconductor memory cell with electron-trapping erase state, which isoperated as flash memory and is able to store two bits. The erasuretakes place by Fowler-Nordheim tunneling of electrons from eitherchannel or gate electrode into the storage layer of a conventionalcharge-trapping layer sequence, for example an ONO layer sequence. Inprogramming this memory, electric holes are injected into thenon-conducting charge-trapping layer. Hot hole injection can be inducedat source and drain, i.e., at both ends of the channel.

SUMMARY OF THE INVENTION

In one aspect, the present invention provides a method of producing amemory cell array structure that is appropriate for an integration ofcharge-trapping memory cells with CMOS electronic circuits.

In another aspect, the invention provides a method of producing anarrangement of memory cells, especially charge-trapping memory cells,that are designed for long data retention times and having small channellengths. These cells can be produced within an extremely reduced area ofa chip surface having a minimal vertical structure pitch together withthe integration of CMOS transistors having comparatively largesource/drain distances suitable for high electric voltages.

In a further aspect, the invention helps to remove the problem of theapplication of nitride material to insulate the wordline stacks. Thisfeature reduces the endurance due to a larger retention loss.

In yet a further aspect, the invention provides an integration schemefor a charge-trapping memory cell array including an architecture oflocal interconnects electrically connecting source/drain regions ofquadruples of four memory cells. The cells are arranged in every secondgap between the wordlines along the direction of bitlines that arearranged in an upper layer level above the wordlines.

The preferred embodiment method includes forming a gate oxide on asurface of a semiconductor body, in a fashion adapted to the differenttransistor structures within the memory cell array area and within theaddressing circuit peripheral area. A memory layer sequence of oxide,nitride and oxide or other suitable materials used as charge-trappinglayers of the memory cells can also be applied and structured in thisprocess step, but this is not the preferred embodiment. Shallow trenchisolations can be formed at the same surface of the semiconductor bodyto produce electrically insulating strips within the semiconductormaterial that are spaced apart from one another and arranged parallel toone another in the memory cell region.

A gate electrode layer, preferably of polysilicon, a wordline layer,preferably a metal or metal-silicide layer, and a hardmask layer,preferably of silicon nitride, are formed on the surface of thesemiconductor body. These layers are structured so as to form wordlinestacks that are spaced apart and parallel to one another and that runacross the shallow trench isolations. These stacks also delimit thelocation of the memory layer between the gate electrode layer and achannel region of the memory cells. This can be accomplished either bystructuring the already provided memory layer sequence or by enablingthe formation of a memory layer in undercut openings at lower edges ofthe gate electrode layer. The gate oxide between the wordline stacks isetched away, thereby preferably forming undercut openings between thegate electrode layer and the semiconductor material.

In a preferred embodiment, a memory layer sequence is arranged withinthe undercut openings on both sides of the wordline stacks, especially acharge-trapping memory layer of dielectric material, for instancesilicon nitride, embedded in dielectric confinement material likesilicon oxide. Doping atoms are implanted to form source/drain regionson both sides of the wordline stacks. A gap filling, preferably of oxidematerial, is deposited between the wordline stacks, and the oxidematerial is planarized to an upper surface level of the hardmask layer.A cap layer, preferably of nitride, is applied. Parts of the cap layerand of an upper partial layer of the gap filling within an area providedfor contact holes are removed to form recesses. Spacers can be formed onsidewalls of the recesses.

The gap filling is further removed to form contact holes, in the courseof which process step gap filling residuals are left on the sidewalls ofthe wordline stacks beneath the spacers. The contact holes are filledwith an electrically conducting material, especially polysilicon, whichis structured to form local interconnects that are provided for anelectric connection of said source/drain regions to bitlines to beapplied in superior layer levels.

An upper insulating layer, which is structured, together with the caplayer, the hardmask layer, the wordline layer, and the gate electrodelayer in a peripheral area is applied to form residual stacks comprisinggate electrodes or gate electrodes and conductor tracks intended for theCMOS transistor structures of the addressing circuitry. Sidewall spacersare applied to the residual stacks in the peripheral area. A dopant isimplanted to form source/drain regions provided for CMOS devices, andthe sidewall spacers are removed.

A dielectric material is applied to fill free spaces between theresidual stacks and to form a basic dielectric provided for theapplication of a wiring, especially a multi-level metallization wiringcomprising conductor tracks and intermetal dielectric. Contact holes areformed to contact the source/drain regions of the CMOS devices and,depending on the embodiment, to contact the gate electrode of thesedevices, and contact holes for electric contacts of the localinterconnects, as well as bitline openings provided for the bitlines tobe arranged in an upper layer level. A first metallization is applied toform contact vias in said contact holes and bitlines, which arepreferably formed by a dual damascene process. Finally, an intermetaldielectric and further metallizations are applied to form the intendedwiring.

The hardmask layer, the cap layer and the insulation layer arepreferably applied as silicon nitride layers. The local interconnectsare provided as electric connections between the source/drain regionsand the bitlines. The local interconnects contact the source and drainregions of two pairs of memory cells that are subsequently arrangedalong the two adjacent wordlines. Thus, each local interconnect connectsa bitline to the source/drain regions of quadruples of memory cellsarranged within a square in such a manner that two of these memory cellsare adjacent in the direction of the wordlines and the other two memorycells of this quadruple are adjacent to the first two memory cells,respectively, on the same side, in the direction of the bitline. Each ofthe memory cells within such a quadruple belongs to exactly one furtherquadruple of memory cells, the second source/drain region of one of thecells being connected by a further local interconnect to firstsource/drain regions of the other three memory cells of the respectivefurther quadruple of memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments and examples of the invention are further described indetail in conjunction with the accompanying drawings, in which:

FIG. 1 shows a plan view of a memory cell array with periphery;

FIG. 2 shows a cross-section of a first intermediate product of apreferred example of the inventive method;

FIG. 3 shows the cross-section according to FIG. 2 of a secondintermediate product after further process steps;

FIG. 4 shows the cross-section according to FIG. 3 for a thirdintermediate product after further process steps;

FIG. 5 shows an enlarged cross-section of the third intermediate productaccording to FIG. 4;

FIG. 6 shows the cross-section according to FIG. 4 for a fourthintermediate product after further process steps;

FIG. 7 shows an enlarged cross-section of the fourth intermediateproduct according to FIG. 6;

FIG. 8 shows the cross-section according to FIG. 6 for a fifthintermediate product after further process steps; and

FIG. 9 shows the cross-section according to FIG. 8 for a sixthintermediate product after further process steps.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

FIG. 1 shows the plan view onto a section of the surface of anintermediate product of a memory device fabricated according to a firstembodiment. The wordlines WL_(n) are represented running in parallelfrom left to right across the area of the memory cell array 28. Thisarea comprises shallow trench isolations 1 within the semiconductormaterial of the substrate or semiconductor body, which are spaced apartand arranged parallel to one another, as indicated by broken lines, andrun orthogonally across the wordlines. The bitlines are arranged abovethe areas of the shallow trench isolations 1 and are not shown here.Between the shallow trench isolations, there are the active areascomprising the memory cell transistor structures.

A preferred embodiment to be fabricated by the inventive methodcomprises electrically conductive local interconnects 2 arranged withinthe hatched areas of FIG. 1. Each of the local interconnects 2 bridges ashallow trench isolation 1 and connects source/drain regions of fouradjacent memory cells that are arranged in a square. The channel regionof the transistor structure of a memory cell is located under theappertaining wordline between the source/drain regions situated underthe end parts of the local interconnects. The positions of thesource/drain regions of a memory cell are shown in the example of memorycell e of FIG. 1, where the source/drain regions are designated by S/D.

If the memory cells are enumerated along the wordlines by a continuousenumeration, the local interconnects connect the source/drain regions ofthe odd-numbered memory cells on one side of the respective wordline tothe source/drain regions of the subsequent even-numbered memory cell. Onthe other side of the same wordline, the local interconnects connect thesource/drain regions of the even-numbered memory cells to the subsequentodd-numbered memory cell, according to this continuous enumeration. Asthe local interconnects 2 pertain to memory cells in both adjacentwordlines, the local interconnects 2 connect source/drain regions of atotal of four memory cells, which are arranged in a square quadruple.The memory cells located at a, b, c, and d in FIG. 1, for example, areconnected by the local interconnect LI designated in FIG. 1 so that eachof these four memory cells comprises a source/drain region that isconnected to a source/drain region of the other three memory cells ofthis quadruple.

The memory device further includes an addressing periphery, where CMOSdevices are arranged to form electric circuitry provided as logiccircuit to address the memory cells in read, write and erase operations.The complementary transistors of these electronic circuits are producedaccording to standard technology, but the producing steps areincorporated in the inventive method, which allows the fabrication of acharge-trapping memory cell array of extremely small dimensions withintegrated CMOS addressing circuitry. FIG. 1 shows, by way of example, atransistor structure comprising a gate electrode 26 provided to controlthe channel region between source/drain regions 20 that include LDD(lightly doped drain) regions 21. The area of the memory cell array 28is typically separated from the peripheral area 29 comprising the CMOSdevices, which are processed according to the standard technologycomprising the arrangement of p-wells and n-wells within thesemiconductor substrate provided for complementary transistors.

FIG. 2 shows the cross-section of an intermediate product along thebroken line inserted in FIG. 1 bearing reference to FIG. 8. On the righthand side, this cross-section shows the area of a memory cell array intwo different planes of reference. To the left of the waved line, thecross-section through the area of the shallow trench isolation 1 isshown, while on the right side of the waved line, the section across theactive area is shown. The shallow trench isolations 1 are produced instandard fashion by etching trenches into the semiconductor material andfilling these trenches afterwards with dielectric material, preferablyoxide. A gate oxide 4 is applied to an upper surface of a semiconductorbody 3. The gate oxide 4 can be adapted in thickness and material to thedifferent transistor types to be manufactured. Wells (not shown) can beimplanted and annealed according to the different types of transistorsin different regions of the semiconductor body.

Then a layer sequence provided for the wordline stacks is applied on theupper surface of the semiconductor body. This layer sequence preferablycomprises a gate electrode layer 5, preferably of polysilicon, awordline layer 6 that is intended to reduce the electric trackresistance of the wordline and is preferably made of metal or metalsilicide, and a hardmask layer 7, which is preferably nitride. By asubsequent photolithography and etching step, this gate electrode layer5, this wordline layer 6 and this hardmask layer 7 are structured toform parallel wordline stacks in the area provided for the memory cellarray 28. In order to be comprehensive, FIG. 2 shows an intermediatestack, the lateral dimension of which differs from the fixed pitch ofthe breadth of the wordlines and the interspaces between the wordlinesand which is located in a transitional area between the area of thememory cell array 28 and the CMOS peripheral area 29 as a result ofboundary effects occuring in the lithography step.

FIG. 3 shows the cross-section according to FIG. 2 after a wet etchingprocess step to form the etched openings 8 in the gate oxide 4 and theshallow trench isolations 1 within the area of the memory cell array 28.As can be seen from FIG. 3, the oxide material of the shallow trenchisolations 1 is etched typically about 20 to 30 nm deep, e.g., somewhatdeeper than the gate oxide 4. The etched openings 8 also form undercutopenings between the gate electrode layer 5 and the semiconductor body 3at lower lateral edges of the gate electrode layer 5, as shown on theright side of the wavy line. FIG. 3 also shows the wordline stacks ofwordlines WL₁, WL₂, WL₃, and WL₄ to be compared with the plan view ofFIG. 1.

FIG. 4 shows the cross-section according to FIG. 3 after further processsteps, by which the memory layer sequence, especially a charge-trappinglayer sequence, is fabricated. The preferred example of the inventivemethod is further described for the preferred embodiment comprising anONO memory layer sequence, although any material sequence which isappropriate for charge-trapping memory cells can be applied as well.

Memory layer 12 is formed by formation of multiple layers. A lowerconfinement layer is prepared, which is an oxide layer in the case of anoxide-nitride-oxide charge-trapping layer sequence. The lowerconfinement layer can be produced by a combination of a thermaloxidation of the semiconductor material and the deposition of ahigh-temperature oxide to a thickness of typically about 4 nm. Thedeposition of an LPCVD (low pressure chemical vapor deposition) nitridelayer of a thickness of about 4 nm follows, by which the memory layer12, the actual site of the charge storage, is produced in the undercutopenings between the gate electrode layer and the semiconductormaterial. Then the source/drain regions 10 are formed by an implantationof doping atoms, for example boron or arsenic. After an anneal of thesource/drain implant, the deposited nitride is wet etched so that thememory layer remains in the provided dimensions.

The described process steps which make use of the undercut openingscreate a memory layer comprising striplike parts that are only a fewnanometers wide and especially adapted to multi-bit memory cells ofsmall dimensions and extremely short channels because they provide asufficient electric separation between the sites of the stored bits.Nonetheless, as mentioned above, it is also possible to have acharge-trapping layer which is formed in a standard fashion and is notinterrupted above the middle section of the channel.

FIG. 4 shows the location of the source/drain regions 10 and the memorylayer 12. In each wordline stack WL_(n) of this embodiment, the memorylayer 12 is composed of two strips running along the lower edges of thegate electrode layer 5. The surface of the structure is re-oxidized toform thin oxide layers (not explicitly shown) on the sidewalls of thewordline stacks. The gaps between the wordline stacks are filled bydeposition of a gap filling 9, preferably an oxide, which issubsequently planarized, for example by CMP (chemical mechanicalpolishing). Upon the planar surface formed by the hardmask layer 7 andthe planar gap fillings 9, a cap layer 13 is deposited, as will bedescribed with respect to FIG. 6.

FIG. 5 shows an enlarged cross-section of the intermediate productaccording to FIG. 4 along the broken line inserted in FIG. 1, bearingreference to FIG. 7, encompassing the area of the sequence of thewordline stacks of the first three wordlines WL₁, WL₂, and WL₃. (Notethat in FIG. 5, the shallow trench isolation region 1 is now on theright hand side of the figure.) The boundaries of the implantedsource/drain regions 10 are shown by broken lines designating thePN-junctions. The cross-sections of the striplike parts of the memorylayer 12 are shown between the lower edges of the gate electrode layer 5and the semiconductor body 3. The memory layer 12, which is, forinstance, nitride, is embedded in dielectric material that is oxidematerial in the case of an ONO memory layer sequence and can be part ofthe gate oxide 4. The sidewalls of the wordline stacks are covered byre-oxidation layers 11. The region between the active regions is shownon the right side of FIG. 5, where the etched openings 8 appear in thearea of the shallow trench isolation 1. The gaps between the wordlinesare filled with gap filling of a dielectric material, preferably siliconoxide, as described above.

FIG. 6 shows a cross-section according to FIG. 4 after the formation ofsource/drain contacts 2, which are part of local interconnect 2. FIG. 7shows an enlarged view of a portion of FIG. 6. After the planarizationstep, the cap layer 13, preferably of nitride (e.g., silicon nitride),is deposited and structured by a subsequent photolithography step. Inthis step, the cap layer 13 is removed in the areas provided for thesource/drain contacts 2. If the cap layer 13 is nitride and the gapfilling 9 is oxide, the cap layer 13 is preferably structured byreactive ion etching. The etching process is stopped when the oxide ofthe gap filling 9 is reached. After this, recesses are etched into thematerial of the gap filling 9. The depth of these recesses may at leastapproximately correspond to the thickness of the hardmask layer 7. Then,the material which is provided for the formation of sidewall spacers isdeposited. This material can preferably be nitride, which is removed byreactive ion etching to form typically 30 nm wide first spacers 14 inthe recesses at the level of the hardmask layer 7 and second spacers 15on sidewalls of the openings in the cap layer 13.

The first spacers 14 are relevant for a subsequent anisotropic etchingprocess, by which the gap filling 9 is removed down to the surface ofsemiconductor material in the area of the source/drain regions 10. Asthe etching process is anisotropic, the first spacers 14 mask thematerial of the gap fillings 9 on the sidewalls of the wordline stacksso that gap filling residues 16 are left on these sidewalls, formingsidewall insulations of the wordlines. This stage of the preferredinventive method provides sidewall insulations of the wordlines that canbe formed of oxide instead of the usually applied nitride, as shown bythe described example. Then an electrically conductive material such aspolysilicon can be applied to form the local interconnects 2, which areprovided as source/drain contacts and electric connections between thesource/drain regions and the bitlines.

There are different possibilities to structure the local interconnects 2according to the required dimensions along the wordlines. The etching ofthe gap filling 9 can be performed using a mask which coversperiodically spaced regions of the gaps between the wordline stacks sothat the material of the gap filling 9 remains in these regions aselectric insulation between the etched holes, which are filled with theelectrically conductive material provided for the local interconnects 2.However, a preferable process step sequence to structure the localinterconnects 2 comprises the etching of the gap filling 9 to formcontinuous trenches between the gap filling residues 16 in the openedgaps between the wordline stacks, which are filled with the electricallyconductive material provided for the local interconnects 2. Thismaterial is then structured according to the required longitudinaldimensions of the local interconnects 2 by means of a mask and a furtheretching process; and the interspaces between the structuredinterconnects are filled again with dielectric material, preferably withoxide. The material of the local interconnects 2 is planarized.

FIG. 7 shows an enlarged cross-section according to FIG. 5 of theintermediate product according to FIG. 6. In this cross-section, the gapfilling 9, the re-oxidation layer 11, the arrangement of the memorylayer 12, the structured cap layer 13, the first spacers 14, the secondspacers 15, and the gap filling residues 16 are represented in detail.The first spacers 14, which have served to structure the gap filling 9into the gap filling residues 16, are not necessarily separated from thesecond spacers 15, as shown in FIG. 6, but may be only slightly detachedfrom them. This feature may vary according to the embodiment. It ismerely important to have first spacers 14 to mask the marginal parts ofthe gap filling 9 so that they are not etched away, but form thesidewall insulation of the wordline stacks.

FIG. 8 shows the cross-section according to FIG. 6 after further processsteps performed to structure the CMOS devices. After the application ofan upper insulating layer 17, which may be deposited as plasma enhancednitride, covered with an anti-reflective coating to aid the subsequentphotolithography, the CMOS devices are structured by etching interstices18 in the peripheral area. This structuring defines the gate electrodesthat form part of the gate electrode layer 5. This is shown on the leftside of FIG. 8. After a standard re-oxidation step, doping atoms areimplanted to form LDD (lightly doped drain) regions 21. After thedeposition of a nitride liner, wide sidewall spacers, especially oxidespacers 19, are formed at the sidewalls of the gate electrode stacks.These sidewall spacers 19 have a typical width of about 150 nm. Thesidewall spacers 19 are then used as masks for source/drainimplantations to form source/drain regions 20 of the CMOS devices. TheLDD regions 21 are covered by the sidewall spacers 19 during thisimplantation.

The interstices 18 between the CMOS devices are considerably larger thanthe small gaps between the wordline stacks. By the preferred inventivemethod, it is possible to produce both the transistor structures in thememory cell array having typical dimensions of down to 70 nm and theCMOS device structures having typical lateral dimensions thatnecessitate the application of wider sidewall spacers 19. As the height,i.e., the vertical dimension with respect to the substrate 3, of thegate stacks in the peripheral area 29 is larger than the height of thewordline stacks, the interstices 18 have to be comparatively broaderthan the gaps between the wordline stacks in the memory cell area 28.

In the preferred embodiments of the inventive structure, the verticaldimension d1 of the wordline stack comprising the gate electrode layer5, the wordline layer 6 and the hardmask layer 7 is at most 200 nm,while the vertical dimension d2 of the gate stacks comprising theaforementioned layers plus the cap layer 13 and the insulating layer 17is at least 250 nm. The lateral pitch d3 of the memory cell array,measured across the wordline stacks as a distance between correspondingspots of adjacent wordline stacks, can be chosen to be at most 250 nn.Therefore, the preferred inventive method provides a sequence ofprocessing steps that is suitable to manufacture the CMOS devices of thecircuitry in the peripheral area with the appropriate dimensions afterthe memory cell array has completely been structured in essentiallysmaller dimensions. In this manner, the appropriate lateral and verticaldimensions can be chosen according to the types of transistor devices.The described layer sequence and sequence of process steps is especiallyadapted to the production of completely integrated memory devices.

FIG. 9 shows the cross-section of FIG. 8 after the application ofsource/drain contacts in the peripheral area 29. After an anneal of thejunction implants, the sidewall spacers 19 have been removed, forinstance by wet etching. The interstices 18 are then filled withdielectric material, which may comprise deposited oxide and nitridelayers according to standard technology and a main gap filling of BPSG(boron phosphorous silicate glass). Especially in the area of the memorycell array 28, this filling forms a basic dielectric 22 for themetallization levels of a wiring.

FIG. 9 shows a bitline 23 with bitline contact 24 on the localinterconnect 2 adjacent to the first wordline WL₁. The bitline 23 andthe bitline contact 24 can be produced by the process known by the nameof dual damascene. Contact holes, subsequently filled with electricallyconductive material, serve to produce drain contact vias 25 on thesource/drain regions of the CMOS devices to be connected. The gateelectrode 26 of the CMOS device can also be contacted by means of a gatecontact via 27. As the gate electrode 26 can also be electricallyconnected by an appropriately structured part of the gate electrodelayer 5, for example as shown in FIG. 1, the gate contact via 27 isindicated with a broken line in FIG. 9. Further metal wiring layers andintermetal oxides are applied in the usual fashion and are not shown inFIG. 9. This memory device is then further processed in standardfinishing process steps including passivation and housing. This is notdescribed in detail as it is not constituent of the inventive method.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. It is therefore intended that the appended claims encompassany such modifications or embodiments.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

1. An integrated memory device, comprising: a semiconductor body havinga main surface; a memory cell array arranged at the main surface of thesemiconductor body, the memory cell array comprising wordline stackshaving a first dimension in a direction perpendicular to the mainsurface of the semiconductor body; a peripheral area at the main surfaceof the semiconductor body provided for integrated CMOS circuitry toaddress the memory cell array in write, read, or erase operations; andCMOS devices forming CMOS circuitry arranged in the peripheral area, theCMOS devices comprising gate stacks having a second dimension in thedirection perpendicular to the main surface of the semiconductor body,wherein the first dimension is smaller than the second dimension, andwherein a difference between the first dimension and the seconddimension is compensated by at least one further layer of dielectricmaterial covering the wordline stacks.
 2. The integrated memory deviceof claim 1, wherein: the first dimension of the wordline stacks is atmost 200 nm; and the second dimension of the gate stacks is at least 250nm.
 3. The integrated memory device of claim 1, a pitch of the wordlinestacks, measured across the wordline stacks as a distance betweencorresponding spots of adjacent wordline stacks, is at most 250 nm. 4.The integrated memory device of claim 1, further comprising at least onelayer of dielectric material covering the wordline stacks, the at leastone layer of dielectric material having a thickness equal to thedifference between the first dimension of the wordline stacks and thesecond dimension of the gate stacks.
 5. The integrated memory device ofclaim 1, wherein each wordline stack comprises: a gate dielectric over asurface of the semiconductor body; and a conducting layer over the gatedielectric.
 6. The integrated memory device of claim 5, wherein eachwordline stack further comprises a hardmask layer over the conductinglayer.
 7. The integrated memory device of claim 6, further comprisingshallow trench isolations at the main surface of the semiconductor body,the shallow trench isolations providing electrically insulating stripsspaced apart and arranged parallel to one another in a region providedfor the memory cell array.
 8. The integrated memory device of claim 7,wherein the wordline stacks are spaced apart and arranged parallel toone another and run across the shallow trench isolations in the regionprovided for the memory cell array, thereby delimiting a location of amemory layer between the gate electrode layer and a channel region ofthe memory cells.
 9. The integrated memory device of claim 5, whereinthe gate dielectric comprises a gate oxide.
 10. The integrated memorydevice of claim 5, wherein the conducting layer comprises a wordlinelayer overlying a gate electrode layer.
 11. The integrated memory deviceof claim 1, wherein the first dimension of the wordline stacks is atmost 200 nm.
 12. The integrated memory device of claim 1, wherein thesecond dimension of the gate stacks is at least 250 nm.
 13. Theintegrated memory device of claim 1, wherein the memory cell arraycomprises a plurality of charge trapping memory cells.
 14. Theintegrated memory device of claim 13, wherein each charge trappingmemory cell includes a memory layer, the memory layer comprising aoxide-nitride-oxide layer sequence.
 15. The integrated memory device ofclaim 14, wherein, for each memory cell, the memory layer is located inan undercut opening between a gate electrode and the semiconductor body.16. A semiconductor memory device comprising: a plurality of wordlinestacks over a main surface of a semiconductor body, each wordline stackincluding at least one conductive material and a hardmask overlying theconductive material, the wordline stacks having a first dimension in adirection perpendicular to the main surface; source/drain regions in thesemiconductor body between the wordline stacks; a gap filling betweenthe wordline stacks extending to an upper surface level of the hardmask;contact holes disposed in recesses within the gap filling, the contactholes being filled with electrically conductive material that iselectrically isolated from the conductive material of the wordlinestacks; and CMOS circuitry disposed in peripheral area of thesemiconductor body, the CMOS circuitry including CMOS devices thatinclude gate stacks having a second dimension in the directionperpendicular to the main surface, wherein the first dimension issmaller than the second dimension, and wherein a difference between thefirst dimension and the second dimension is compensated by at least onefurther layer of dielectric material covering the wordline stacks. 17.The integrated memory device of claim 16, wherein: the first dimensionof the wordline stacks is at most 200 nm; and the second dimension ofthe gate stacks is at least 250 nm.
 18. The integrated memory device ofclaim 16, wherein a pitch of the wordline stacks, measured across thewordline stacks at a distance between corresponding spots of adjacentwordline stacks, is at most 250 nm.
 19. The integrated memory device ofclaim 16, wherein the wordline stacks are each coupled to a plurality ofcharge trapping memory cells and wherein the CMOS circuitry comprisescircuitry to address the memory cells in write, read or eraseoperations.